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BUT92
FAST-SWITCHING POWER TRANSISTOR
s s s s s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR hFE > 10 AT IC =35A HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE RECTANGULAR SAFE OPERATING AREA WIDE ACCIDENTAL OVERLOAD AREA
APPLICATIONS s UNINTERRUPTABLE POWER SUPPLY s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUT92 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.
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TO-3 (version "S")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IE I EM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case 25 C
o
Value 350 250 7 50 75 10 15 250 -65 to 200 200
Unit V V V A A A A W
o o
Storage Temperature Junction Temperature
C C
June 1997
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BUT92
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10 ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV o V CE = V CEV Tc = 100 C V CE = V CEV V BE = -1.5V V CE = V CEV V BE = -1.5V Tc = 100 o C V EB = 7 V I C = 0.2 A I E = 50 mA I C = 35 A I C = 35 A I C = 35 A I C = 35 A IB = 3.5 A IB = 3.5 A IB = 3.5 A IB = 3.5 A L = 25 mH 250 7 0.8 1.25 1.2 1.2 125 200 3 1.8 6 3 1.2 1.9 1.5 1.5 Min. Typ. Max. 0.4 4 0.2 2 1 Unit mA mA mA mA mA V V V V V V A/s V V
V CEO(sus) Collector-Emitter Sustaining Voltage V EB0 V CE(sat) V BE(sat) di C /dt V CE(3s) V CE(5s) Emitter-Base Voltage (IC = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Rated of Rise on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage
T j = 100 o C T j = 100 o C
V CC = 200V I B1 = 5.25 A R C = 0 t p = 3s T j = 100 o C V CC = 200V R C = 5.7 V CC = 200V R C = 5.7 I B1 = 5.25 A T j = 100 o C I B1 = 5.25 A T j = 100 o C
INDUCTIVE LOAD
Symbol ts tf tc V CEW Parameter Storage Time Fall Time Crossover Time Maximum Collector Emitter Voltage without Snubber Test Conditions V CC = 200 V I C = 35 A V BB = -5 V R B2 = 0.7 V CC = 50 V V BB = -5 V L C = 48 H T j = 125 o C V Clamp = 250 V I B1 = 3.5 A L C = 0.28 mH o T j = 100 C I CWoff = 52 A I B1 = 3.5 A R B2 = 0.7 250 Min. Typ. 1.4 0.15 0.3 Max. 3 0.4 0.7 Unit s s s V
* Pulsed : Pulse duration = 300 s, duty cycle = 2%
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BUT92
TO-3 (version S) MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D C
U
V
O
N
R
B
P003O
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E
BUT92
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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